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Physics-based compact model of nanoscale MOSFETs-Part II: effects of degeneracy on transport

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2 Author(s)
Mugnaini, G. ; Dipt. di Ingegneria dell''Informazione, Univ. di Pisa, Italy ; Iannaccone, G.

In this paper, we extend our derivation of an analytical model for nanoscale MOSFETs, focusing on the effects of Fermi-Dirac statistics on vertical electrostatics and on carrier transport. We derive a relation between mobility and mean-free path valid under degenerate statistics, and investigate the cases of rectangular and triangular quantum confinement under Fermi-Dirac statistics in the transition from DD to B transport. We derive a simple, physics-based and continuous analytical model that describes double-gate MOSFETs, fully depleted silicon-on-insulator MOSFETs, and bulk MOSFETs in the electric quantum limit in the whole range of transport regimes comprised between DD (device length much larger than mean-free path) and B (device length much smaller than mean-free path).

Published in:

Electron Devices, IEEE Transactions on  (Volume:52 ,  Issue: 8 )