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MOS RF reliability subject to dynamic voltage stress-modeling and analysis

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2 Author(s)
Chuanzhao Yu ; Electr. & Comput. Eng. Dept., Univ. of Central Florida, Orlando, FL, USA ; J. S. Yuan

Dynamic stress on MOSFETs with 900-MHz inverter-like waveforms as well as static (or dc) stress were evaluated experimentally. It showed that the degradation due to dynamic stress is less than that of dc stress for our test transistors. A compact model is used to evaluate the degradation in radio frequency performances, such as transconductance, cutoff frequency, linearity, and noise figure. A class-AB power amplifier is presented as an example to demonstrate the effect of dynamic stress on RF circuit performance.

Published in:

IEEE Transactions on Electron Devices  (Volume:52 ,  Issue: 8 )