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A novel P-channel nitride trapping nonvolatile memory device is studied. The device uses a P+-poly gate to reduce gate injection during channel erase, and a relatively thick tunnel oxide (>5 nm) to prevent charge loss. The programming is carried out by low-power band-to-band tunneling induced hot-electron (BTBTHE) injection. For the erase, self-convergent channel erase is used to expel the electrons out of nitride. Experimental results show that this p-channel device is immune to read disturb due to the large potential barrier for hole tunneling. Excellent P/E cycling endurance and retention properties are demonstrated. This p-channel device shows potential for high-density NAND-type array application with high-programming throughput (>10 Mb/sec).