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Quantum-mechanical effects on the threshold voltage of undoped double-gate MOSFETs

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2 Author(s)
Trivedi, V.P. ; Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA ; Fossum, J.G.

Quantum-mechanical (QM), or carrier energy-quantization, effects on the subthreshold characteristics, including the threshold voltage (Vt), of generic undoped double-gate (DG) CMOS devices with ultrathin (Si) bodies (UTBs) are physically modeled. The analytic model, with dependences on the UTB thickness (tSi), the transverse electric field, and the UTB surface orientation, shows how Vt is increased, and reveals that 1) the subthreshold carrier population in higher-energy subbands is significant, 2) the QM effects in DG devices with {110}-Si surfaces, common in FinFETs, are comparable to those for {100}-Si surfaces for tSi>∼4 nm, 3) the QM effects can increase the gate swing, and (iv) the QM effects, especially for tSi<∼4 nm in nMOSFETs with {110}-Si surfaces and in pMOSFETs, will strongly influence DG CMOS design and scalability.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 8 )