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A simple Flash memory cell model for transient circuit simulation

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2 Author(s)
Yong Hoon Kang ; Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea ; Songcheol Hong

A simple Flash memory cell model for circuit simulation is presented. The proposed model gives an excellent fitting of dc and transient data and does not require additional simulation time comparing with that of a MOSFET transistor. Effective control-gate voltage method and ideal current-mirror technique are introduced to calculate floating-gate voltage. These allow macro modeling of a Flash memory cell in a circuit simulator.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 8 )