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Impact of NBTI on the temporal performance degradation of digital circuits

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5 Author(s)
Paul, B.C. ; Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA ; Kunhyuk Kang ; Kufluoglu, H. ; Alam, M.A.
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Negative bias temperature instability (NBTI) has become one of the major causes for reliability degradation of nanoscale circuits. In this letter, we propose a simple analytical model to predict the delay degradation of a wide class of digital logic gate based on both worst case and activity dependent threshold voltage change under NBTI. We show that by knowing the threshold voltage degradation of a single transistor due to NBTI, one can predict the performance degradation of a circuit with a reasonable degree of accuracy. We find that digital circuits are much less sensitive (approximately 9.2% performance degradation in ten years for 70 nm technology) to NBTI degradation than previously anticipated.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 8 )