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Static and dynamic properties of laterally coupled DFB lasers based on InAs/InP QDash structures

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10 Author(s)
Kaiser, W. ; Technische Phys., Wurzburg Univ., Germany ; Mathwig, K. ; Deubert, S. ; Reithmaier, J.P.
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Laterally coupled, complex distributed feedback lasers based on AlInGaAs/InAs/InP quantum dash layers were fabricated by maskless focused ion beam lithography. Continuous-wave powers above 30 mW at room temperature, sidemode suppression ratios of 44 dB and a modulation bandwidth of 7.6 GHz were demonstrated.

Published in:

Electronics Letters  (Volume:41 ,  Issue: 14 )

Date of Publication:

7 July 2005

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