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Browse Journals & Magazines > Electronics Letters ...> Volume:41 Issue:14 Help

Static and dynamic properties of laterally coupled DFB lasers based on InAs/InP QDash structures

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10 Author(s)
Kaiser, W. ; Technische Phys., Wurzburg Univ., Germany ; Mathwig, K. ; Deubert, S. ; Reithmaier, J.P.
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Laterally coupled, complex distributed feedback lasers based on AlInGaAs/InAs/InP quantum dash layers were fabricated by maskless focused ion beam lithography. Continuous-wave powers above 30 mW at room temperature, sidemode suppression ratios of 44 dB and a modulation bandwidth of 7.6 GHz were demonstrated.

Published in:
Electronics Letters  (Volume:41 ,  Issue: 14 )

Date of Publication: 7 July 2005

Page(s):
808 - 810
ISSN :
0013-5194
INSPEC Accession Number:
8489415
Digital Object Identifier :
10.1049/el:20051160
Product Type:
Journals & Magazines
Date of Current Version :
25 July 2005
Issue Date :
7 July 2005
Sponsored by :
Institution of Engineering and Technology

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