By Topic

Self-powered active pixel sensors for ultra low-power applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
A. Fish ; The VLSI Syst. Center, Ben-Gurion Univ. of the Negev, Beer-Sheva, Israel ; S. Hamami ; O. Yadid-Pecht

A novel approach of self-powered CMOS active pixel sensors (SPS) for ultra low-power applications is presented. The SPS architecture allows generation of electric power by employing a light sensitive device, located on the same silicon die as the active pixel sensor (APS). While providing the energy required for the pixel and signal readout circuit operation, the SPS enables power dissipation reduction from the conventional power supply. This makes the SPS architecture very useful in applications where ultra low-power is the main demand. A detailed analysis of the proposed structure is carried out, with respect to power dissipation requirements, sensor area and power generation efficiency, showing the advantages and drawbacks of the SPS architecture. An illustrative example of an SPS structure in a 0.35 μm standard CMOS technology is discussed and a test chip design, implemented in advanced 0.18 μm standard CMOS technology, is presented.

Published in:

2005 IEEE International Symposium on Circuits and Systems

Date of Conference:

23-26 May 2005