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A novel oscillation circuit using a resonant-tunneling diode

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3 Author(s)
N. Muramatsu ; Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan ; H. Okazaki ; T. Waho

A novel oscillation circuit using a resonant-tunneling diode (RTD) is proposed. The circuit has a simple configuration consisting of an RTD, a high-electron-mobility transistor (HEMT), and an inductor. A large oscillation swing that substantially exceeds the RTD negative differential resistance region can be obtained, since the oscillation is based on the RTD switching between the peak and valley states. To analyze the large-signal behavior, circuit simulation has been carried out. It was found that the oscillation frequency increases by increasing the RTD peak current density jp or by decreasing the inductance L. A frequency as high as 180 GHz has been predicted when jp=1×105 A/cm2 and L=0.1 nH.

Published in:

2005 IEEE International Symposium on Circuits and Systems

Date of Conference:

23-26 May 2005