By Topic

High efficiency wide bandwidth power supplies for GSM and EDGE RF power amplifiers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Yushan Li ; Nat. Semicond., Longmont, CO, USA ; Maksimovic, D.

This paper presents and compares three circuit architectures that are promising candidates to efficiently and dynamically supply GSM and EDGE RF power amplifiers in handsets. The candidate architectures include a switcher with hysteretic control, and two linear-assisted switcher configurations. The architectures have been implemented and tested by simulation in a standard 0.5 μm, 5 V CMOS process. The circuits are compared in terms of efficiency and reference tracking capabilities.

Published in:

Circuits and Systems, 2005. ISCAS 2005. IEEE International Symposium on

Date of Conference:

23-26 May 2005