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A complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) camera with wide dynamic range (WDR) linear output and in-pixel frame difference is reported. The double in-pixel storage enables global shutter operation in addition to frame difference and WDR functions. The pixel pitch is 7 μm with a fill factor of 15%. A 64×64 APS array with on-chip dynamic random access memory (DRAM) has been fabricated in 0.18 μm 1P6M CMOS technology. The pixels operate with 1.8 V supply for low-power operation. The expected power consumption is around 50 mW.