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Noise properties of magnetic tunnel junctions

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4 Author(s)
Md Nor, A.F. ; Graduate Sch. of Eng., Tohoku Univ., Sendai, Japan ; Ando, Yasuo ; Mochizuki, N. ; Miyazaki, Terunobu

Magnetron sputtering was used to prepare the magnetic tunnel junction (MTJ) with the stacking structure SiO2/Ta(3 nm)/Ni80Fe20(3 nm)/Cu(20 nm)/Ni80Fe20(3 nm)/IrMn(10 nm)/Co75Fe25(5 nm)/Al(0.8 nm)-oxide/Co75Fe25(5 nm)/Ni80Fe20(20 nm)/Ta(5 nm). Low frequency magnetic noise was measured on MTJ at critical annealing temperature at which the MR ratio increases at 250 °C and decreases at 350 °C due to interlayer diffusion of Mn. The noise increases at the transition indicating that it was magnetic in origin and therefore is field dependent at the corresponding annealing temperatures.

Published in:

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Date of Conference:

4-8 April 2005