Skip to Main Content
The switching characteristic of the MTJ (magnetic tunnel junction) submicron pattern is investigated. The mechanism of the step in the M-H loop analyzed. In the M-H loop of the MTJ, which has a C-type domain, a step is created by pinning of the 360-degree domain wall, which is caused by the stray field originated in the pinned layer. The position of the steps in the M-H loops is dependent on the direction of the stray field from the pinned layer. The model explains the steps in the M-H loops obtained from the experiment.