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Edge domain dependent pinning effect by the stray field in the patterned magnetic tunnel junction

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8 Author(s)
Shimomura, N. ; Corp. Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan ; Kishi, T. ; Yoshikawa, M. ; Kitagawa, E.
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The switching characteristic of the MTJ (magnetic tunnel junction) submicron pattern is investigated. The mechanism of the step in the M-H loop analyzed. In the M-H loop of the MTJ, which has a C-type domain, a step is created by pinning of the 360-degree domain wall, which is caused by the stray field originated in the pinned layer. The position of the steps in the M-H loops is dependent on the direction of the stray field from the pinned layer. The model explains the steps in the M-H loops obtained from the experiment.

Published in:

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Date of Conference:

4-8 April 2005

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