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The effective bit addressing times for precessional magnetization reversal in magnetic random access memory cells is studied. Different addressing times τS for switching and τNS for non-switching are studied using a magneto transport setup. The ultra fast magnetisation dynamics of the free layer is accessed by reading out the tunnelling magneto resistance (TMR) response of the cell using a fast sampling oscilloscope. From the measured TMR, the time evolution of the easy axis magnetization component mx of the free layer is derived. Bit addressed switching of the free layer is studied by application of a fast perpendicular field pulse in combination with an easy axis bias field.