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High tunnel magnetoresistance in epitaxial Co2Cr0.6Fe0.4Al/MgO/CoFe tunnel junctions

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5 Author(s)
Marukame, Takao ; Div. of Electron. for Informatics, Hokkaido Univ., Sapporo, Japan ; Kasahara, T. ; Matsuda, K. ; Uemura, T.
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Epitaxial magnetic tunnel junctions (MTJ) using a Co-based full-Heusler alloy along with a MgO tunnel barrier were fabricated successfully using rf magnetron sputtering and electron gun deposition. The fabricated epitaxial MTJ layer structure was as follows: MgO buffer layer/Co2Cr0.6Fe0.4Al lower electrode/MgO tunnel barrier/Co50Fe50 upper electrode, grown on a MgO(001) single-crystal substrate. High tunnel magnetoresistance (TMR) ratios of 42% at room temperature and 74% at 55 K were measured for the MTJs. These results confirm the promise of epitaxial MTJs using Co-based Heusler alloys as a key device structure.

Published in:

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Date of Conference:

4-8 April 2005