On-wafer noise-parameter measurement using wide-band frequency-variation method

In this paper, it is demonstrated that the newly proposed wide-band frequency-variation method, where only one set of matched and mismatched noise measurements is used, can efficiently determine the noise parameters of an ultra-sensitive transistor on-wafer at room temperature. Since the experimental setup is similar to that of conventional noise-temperature measurement while no complicated hardware is employed, this new approach is straightforward, yet efficient, and can be easily extended to applications with much higher or broader frequency ranges. Both the measured noise parameters of the post-amplifier stage and the transistor under test will be presented and investigated.