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A technique for modelling S-parameters for HEMT structures as a function of gate bias

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3 Author(s)
Mahon, S.J. ; Macquarie Univ., Sydney, NSW, Australia ; Skellern, D.J. ; Green, F.

A physically based technique for modeling HEMT structure S-parameters is presented. The core of the model is directly dependent on the HEMT wafer structure and the physical gate length. The model accurately predicts the device's S-parameters as a function of the applied gate bias. The physical basis facilitates the modeling of different types of HEMT structures. Measured S-parameters and simulation results over a frequency range of 1 to 25 GHz are presented for three different HEMT structures: uniformly doped, GaAs channel; pulse-doped, GaAs channel; and uniformly doped, strained InGaAs channel

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:40 ,  Issue: 7 )