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Integrated physics-oriented statistical modeling, simulation, and optimization [MESFETs]

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6 Author(s)
Bandler, J.W. ; Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada ; Biernacki, R. ; Cai, Q. ; Shao Hua Chen
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Physics-based modeling of MESFETs is addressed from the point of view of efficient simulation, accurate behavior prediction and robust parameter extraction. A novel integration of a large-signal physics-based model into the harmonic balance equations for simulation of nonlinear circuits, involving an efficient Newton update, is presented and exploited in a gradient-based FAST (feasible adjoint sensitivity technique) circuit optimization technique. For yield-driven MMIC design a relevant physics-based statistical modeling methodology is presented. Quadratic approximation of responses and gradients suitable for yield optimization is discussed. The authors verify their theoretical contributions and exemplify their computational results using built-in and user-programmable modeling capabilities of the CAE systems OSA90/hope and HarPE. Results of device modeling using a field-theoretic nonlinear device simulator are reported

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:40 ,  Issue: 7 )