Referenced Items are not available for this document.
A reactive sputtering process for deposition of high-quality TiN films was demonstrated. Continuous process/hardware improvement has enabled achievement of a robust TiN production process in VLSI manufacturing. The source of the particles produced during reactive sputtering has been identified. Analysis of the results indicates that the particles are produced at the target surface and are a strong function of the process parameters. By optimizing the process parameters the particle density on the TiN films has been reduced by a factor of 16, from a previous average of >2.3 particles/cm2 to ⩽0.15 particles/cm2 for particles 0.5 μm and over. A brief discussion on particle measurement gauge capability and caution in interpretation of the particle data on TiN films is also presented
Published in:
Semiconductor Manufacturing Science Symposium, 1991. ISMSS 1991., IEEE/SEMI International
Date of Conference: 20-22 May 1991
- Page(s):
- 124 - 128
- Meeting Date :
- 20 May 1991-22 May 1991
- Print ISBN:
- 0-7803-0027-0
- INSPEC Accession Number:
- 4086934
- Conference Location :
- Burlingame, CA
- Digital Object Identifier :
- 10.1109/ISMSS.1991.146280
- Product Type:
- Conference Publications
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