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Real time statistical process control for plasma etching

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3 Author(s)
Guo, H.-F. ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Spanos, Costas J. ; Miller, A.J.

The development and the application of a real-time statistical process control (SPC) scheme are presented. Based on time-series and multivariate statistics, this scheme can accommodate real-time sensor readings such as can be collected from a single-wafer plasma etcher via the SECSII communications protocol. The scheme has been successfully applied on a Lam Rainbow plasma etcher, and it has been able to detect internal machine shifts that cannot be seen with classical SPC procedures

Published in:

Semiconductor Manufacturing Science Symposium, 1991. ISMSS 1991., IEEE/SEMI International

Date of Conference:

20-22 May 1991