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Optical properties and photosensitivity of vacuum synthesized Ge-doped sol-gel amorphous SiO2

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5 Author(s)
Agnello, S. ; Dept. of Phys. & Astron. Sci., Palermo Univ., Italy ; Boscaino, R. ; La Mattina, F. ; Grandi, S.
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We report optical and electron paramagnetic resonance investigations of gamma ray irradiation effects in sol-gel Ge-doped amorphous SiO2. The studied materials have Ge-doping levels up to 104 molar part per million and were densified by two routes differing for the atmosphere: O2+N2 or vacuum. The obtained results evidence that irradiation affects matrix sites inducing paramagnetic defects. Furthermore, the comparison between the two densification procedures shows that vacuum atmosphere induces higher radiation sensitivity.

Published in:

Fibres and Optical Passive Components, 2005. Proceedings of 2005 IEEE/LEOS Workshop on

Date of Conference:

22-24 June 2005

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