Cart (Loading....) | Create Account
Close category search window
 

Optical properties and photosensitivity of vacuum synthesized Ge-doped sol-gel amorphous SiO2

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Agnello, S. ; Dept. of Phys. & Astron. Sci., Palermo Univ., Italy ; Boscaino, R. ; La Mattina, F. ; Grandi, S.
more authors

We report optical and electron paramagnetic resonance investigations of gamma ray irradiation effects in sol-gel Ge-doped amorphous SiO2. The studied materials have Ge-doping levels up to 104 molar part per million and were densified by two routes differing for the atmosphere: O2+N2 or vacuum. The obtained results evidence that irradiation affects matrix sites inducing paramagnetic defects. Furthermore, the comparison between the two densification procedures shows that vacuum atmosphere induces higher radiation sensitivity.

Published in:

Fibres and Optical Passive Components, 2005. Proceedings of 2005 IEEE/LEOS Workshop on

Date of Conference:

22-24 June 2005

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.