Scheduled System Maintenance:
Some services will be unavailable Sunday, March 29th through Monday, March 30th. We apologize for the inconvenience.
By Topic

Comparative study of the switching energy losses between Si PiN and SiC Schottky diode

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Yahaya, N.Z. ; Universiti Teknologi Petronas, Malaysia ; Khoo Choon Chew

paper is to compare the switching energy losses of the silicon carbide Schottky diode with the silicon PiN diode. The comparison is done using an inductive load chopper circuit simulated with Pspice, a type of circuit analysis software. Both diode models used for the simulation are from Infineon; the silicon carbide Schottky (SDP04S60, 4 A/600 V) and silicon PiN (IDP06E60, 6 A/600 V).

Published in:

Power and Energy Conference, 2004. PECon 2004. Proceedings. National

Date of Conference:

29-30 Nov. 2004