Referenced Items are not available for this document.
A new equivalent circuit model for insulated gate bipolar transistor is presented. It takes into account both electron and hole conduction in sensors and is incorporated with SPICE3 for the simulation of three types of current sensors, namely active, bipolar, and MOS sensors. It adopts a multiMOS model to include the doping variation in the MOS body. The results agree well with the current sensing measurements within an average error of 4.4%.
Published in:
Power Electronics, IEEE Transactions on
(Volume:20
,
Issue:
4
)
Date of Publication: July 2005
- Page(s):
- 725 - 731
- ISSN :
- 0885-8993
- INSPEC Accession Number:
- 8500691
- Digital Object Identifier :
- 10.1109/TPEL.2005.850909
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 05 July 2005
- Issue Date :
- July 2005
- Sponsored by :
- IEEE Power Electronics Society
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