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94 GHz high power performances of InAs0.4P0.6 channel HEMTs on InP

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5 Author(s)
Medjdoub, F. ; Dept. Hyperfrequences et Semi-conducteurs, UMR-CNRS, Villeneuve d''Ascq, France ; Zaknoune, M. ; Wallart, X. ; Gaquiere, C.
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High power performances at 94 GHz using an innovating large bandgap InAsP channel high electron mobility transistor on InP substrate containing an InP/AlInAs composite barrier are reported. This 100 nm gate HEMT exhibits a high current density of 600 mA/mm, and an extrinsic transconductance of 850 mS/mm. The off state breakdown is greater than 5.5 V and defined at a gate current density of 1 mA/mm. At 94 GHz, they demonstrated a maximum output power of 260 mW/mm at 3 V of drain voltage with 5.9 dB power gain and a power added efficiency (PAE) of 11%. This is believed to be the best combination between output power density and power gain of any InP HEMT reported at this frequency.

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Electronics Letters  (Volume:41 ,  Issue: 13 )