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On the parasitic gate capacitance of small-geometry MOSFETs

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3 Author(s)
Kumar, M.J. ; Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi, India ; Venkataraman, V. ; Gupta, S.K.

Parasitic capacitances in aggressively scaled-down MOSFETs play a major role in influencing the device performance. Accurate and simple models are required to predict the detrimental effect of the parasitic capacitances which often do not scale down with device dimensions.

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Electron Devices, IEEE Transactions on  (Volume:52 ,  Issue: 7 )