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Lateral asymmetric channel (LAC) or single halo devices have been reported to exhibit excellent short channel behavior in the sub-100-nm regime. In this paper, we have quantified the performance degradation in LAC devices due to fingered layouts. Our mixed-mode two-dimensional simulation results show that though the fingered layout of the device limits the performance of these MOSFETs, they still show superior performance over the conventional devices in the sub-100-nm channel length regime. We also present the simulation results of a two-stage operational amplifier with LAC and conventional devices using a 0.13-μm technology with the help of look-up table simulations. Our results show that for the given design specifications, an OPAMP layout with conventional devices occupies 18% more chip area compared to the LAC device.
Date of Publication: July 2005