By Topic

A broad-band lumped element analytic model incorporating skin effect and substrate loss for inductors and inductor like components for silicon technology performance assessment and RFIC design

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

13 Author(s)
Rotella, F. ; Skyworks Solutions Inc., Irvine, CA, USA ; Bhattacharya, B.K. ; Blaschke, V. ; Matloubian, M.
more authors

We present a broad-band lumped element planar inductor model that is suitable for RFIC design in silicon technologies. We provide extensions of the modeling methodology to similar components such as differential inductors, baluns, and solenoid inductors. The analytic computation of the physics-based model components, incorporating both metal skin effect and substrate loss, is described. The model is validated using measured data from over 200 inductors made with five different silicon back-end process technologies. The physics-based implementation of the model allows its use for determining the optimum process technology characteristics for specific radio frequency integrated circuit (RFIC) designs. The analytical based implementation with lumped elements enables effective integration into a robust CAD system for efficient design of RFIC circuits.

Published in:

Electron Devices, IEEE Transactions on  (Volume:52 ,  Issue: 7 )