Referenced Items are not available for this document.
A physically based scalable model for MOS varactors, including analytical surface potential based charge modeling and physical geometry and process parameter based parasitic modeling, is proposed. Key device performances of capacitance and quality factor Q are validated over a wide voltage, frequency, and geometrical space. The model, implemented in Verilog-A for simulator portability, provides for robust and accurate RF simulation of MOS varactors.
Published in:
Electron Devices, IEEE Transactions on
(Volume:52
,
Issue:
7
)
Date of Publication: July 2005
- Page(s):
- 1343 - 1353
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 8534794
- Digital Object Identifier :
- 10.1109/TED.2005.850693
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 27 June 2005
- Issue Date :
- July 2005
- Sponsored by :
- IEEE Electron Devices Society
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