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SiGe BiCMOS technology for RF circuit applications

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2 Author(s)
M. Racanelli ; Jazz Semicond., Newport Beach, CA, USA ; P. Kempf

SiGe BiCMOS is reviewed with focus on today's production 0.18-μm technology at fT/fMAX of 150/200 GHz and future technology where device scaling is bringing about higher fT/fMAX, as well as lower power consumption, noise figure, and improved large-signal performance at higher levels of integration. High levels of radio frequency (RF) integration are enabled by the availability of a number of active and passive modules described in this paper including high voltage and high-power devices, complementary PNPs, high quality MIM capacitors, and inductors. Key RF circuit results highlighting the advantages of SiGe BiCMOS in addressing today's RF IC market are also discussed both for applications at modest frequencies (1 to 10 GHz) as well as for emerging applications at higher frequencies (20 to >100 GHz).

Published in:

IEEE Transactions on Electron Devices  (Volume:52 ,  Issue: 7 )