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A novel high-performance asymmetric hetero-doped S/D high-voltage MOSFET

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5 Author(s)
Jun Cai ; Fairchild Semicond., Portland, ME, USA ; Harley-Stead, M. ; Park, S. ; Woloszyn, J.
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A novel high-voltage MOSFET structure, using a simple yet effective concept of an asymmetric hetero-doped source/drain (S/D) is proposed. The asymmetric hetero-doped S/D reduces the on-state resistance of the transistor due to the high doping used for device drain drift, provides excellent ruggedness for parasitic NPN turned-on due to a minimized n+ source spacer, and also raises the device breakdown voltage due to charge compensation in the composite drain drift region. Therefore, the asymmetric hetero-doped S/D structure allows the high voltage MOSFET to have a high current handling capability with a small device size. This in turn causes the R (sp, on) to be low, leading to high performance for the power device when used in a power integrated circuit. Measured results show that a 24-V breakdown voltage new device with a low-cost two-layer metal (Al) back-end achieves very low R (sp, on) of 0.166 mΩ·cm2. Furthermore, the new device with a 65-V high-side capability achieves good isolation performance even when switching S/D to -20 V and also gets a cutoff frequency of 13 GHz at a gate voltage of 5.5 V.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 7 )