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Low noise RF MOSFETs on flexible plastic substrates

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9 Author(s)
Kao, H.L. ; Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan ; Chin, A. ; Hung, B.F. ; Lee, C.F.
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We report a low minimum noise figure (NFmin) of 1.1 dB and high associated gain (12 dB at 10 GHz) for 16 gate-finger 0.18-μm RF MOSFETs, after thinning down the Si substrate to 30 μm and mounting it on plastic. The device performance was improved by flexing the substrate to create stress, which produced a 25% enhancement of the saturation drain current and lowered NFmin to 0.92 dB at 10 GHz. These excellent results for mechanically strained RF MOSFETs on plastic compare well with 0.13-μm node (L/sub g/=80 nm) devices.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 7 )