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A novel and process-compatible scheme for fabricating poly-Si thin-film transistors (TFTs) on an FSG buffer layer was proposed and demonstrated. Experimental results reveal that remarkably improved device performance and uniformity can be achieved with appropriate fluorine concentration. The poly-Si TFTs fabricated on FSG layers have a higher on-current, a lower leakage current, and a higher field-effect mobility compared with the conventional poly-Si TFTs. Furthermore, the incorporation of fluorine also increased the reliability of poly-Si TFTs against hot carrier stressing, which is attributed to the formation of Si-F bonds.