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Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO2 and HfO2

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11 Author(s)
Lu, Ching-Huang ; Dept. of Mater. Sci. & Eng., Stanford Univ., CA, USA ; Wong, Gloria M.T. ; Deal, M.D. ; Tsai, W.
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In this letter, we investigate a method to adjust the gate work function of an MOS structure by stacking two metals with different work functions. This method can provide work function tunability of approximately 1 eV as the bottom metal layer thickness is increased from 0 to about 10 nm. This behavior is demonstrated with different metal combinations on both SiO2 and HfO2 gate dielectrics. We use capacitance-voltage (C-V) characteristics to investigate the effect of different annealing conditions and different metal/metal bilayer couples on the work function. By comparing the as-deposited and annealed films, and by comparing with metals that are relatively inert with each other, we deduce that the work function tuning behavior likely involves metal/metal interdiffusion.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 7 )

Date of Publication:

July 2005

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