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A 24-GHz 3.9-dB NF low-noise amplifier using 0.18 μm CMOS technology

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5 Author(s)
Shin, S.-C. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Ming-Da Tsai ; Ren-Chieh Liu ; Lin, K.-Y.
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A 24-GHz low-noise amplifier (LNA) was designed and fabricated in a standard 0.18-μm CMOS technology. The LNA chip achieves a peak gain of 13.1 dB at 24 GHz and a minimum noise figure of 3.9 dB at 24.3 GHz. The supply voltage and supply current are 1 V and 14 mA, respectively. To the author's knowledge, this LNA demonstrates the lowest noise figure among the reported LNAs in standard CMOS processes above 20 GHz.

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Microwave and Wireless Components Letters, IEEE  (Volume:15 ,  Issue: 7 )