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Pulse response characteristics for GaAs MESFET distributed amplifiers

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4 Author(s)
Heidmann, P. ; University of Wisconsin, Madison, WI, USA ; Beyer, J.B. ; Sokolov, V. ; Tutt, M.

The pulse response characteristics of a broad-band GaAs MESFET distributed amplifier were measured. The characteristics show close agreement with measured sinusoidal gain at small-signal levels, and the expected gain compression occurred for large-signal input. Pulse distortion was negligible even for pulse height comparable to FET pinchoff.

Published in:

Proceedings of the IEEE  (Volume:75 ,  Issue: 7 )

Date of Publication:

July 1987

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