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Electron-beam fabricated high-speed digital GaAs integrated circuits

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4 Author(s)
P. T. Greiling ; Hughes Research Laboratory, Malibu, CA ; R. E. Lee ; F. S. Ozdemir ; A. E. Schmitz

The fabrication and performance of high-speed GaAs logic circuits incorporating submicrometer gate length FET's fabricated by electron-beam lithography are discussed. The process technology required for realizing 0.5-µm gate length devices is detailed. High-speed results including a 10-GHz logic gate, 34-ps gate delay for a ring oscillator, and a 4-GHz flip-flop are described.

Published in:

Proceedings of the IEEE  (Volume:70 ,  Issue: 1 )