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Mapping nonlinearities over the active regions of semiconductor devices

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2 Author(s)
Sawyer, D.E. ; National Bureau of Standards, Washington, DC ; Berning, D.W.

A laser scanner employing a modulated low-power 0.633- µm He-Ne laser has been used in a nondamaging manner to locate portions of a silicon bipolar UHF transistor which electrically behave in a nonlinear manner at a signal frequency of 470 MHz. In effect, the method uses the device scanned as a frequency converter to produce an IF output for a display screen whenever the laser spot is incident on nonlinear regions.

Published in:

Proceedings of the IEEE  (Volume:64 ,  Issue: 11 )