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Grown junction GaAs solar cell

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2 Author(s)
Shen, C.C. ; Stanford Electronics Laboratories, Stanford, CA ; Pearson, Gerald L.

Using multiple layer liquid phase epitaxial (LPE) growth techniques, p(AlxGa1-xAs:Ge)-p(GaAs:Ge)-n+(GaAs:Te) solar cells were fabricated. Germanium was used as the p-type dopant to eliminate impurity diffusion and to maximize minority carrier diffusion lengths. These procedures provide precise control of the thickness and carrier concentration of each individual layer.

Published in:

Proceedings of the IEEE  (Volume:64 ,  Issue: 3 )