By Topic

Nonvolatile memory effects of Ag-Ag photodoped amorphous As2S3-Mo diode

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Hirose, Yooichi ; Nippon Institute of Technology, Minami-Saitama, Saitama, Japan ; Hirose, Haruo

Better reversible switching and memory effects of a chalcogenide glass diode were observed in connection with the polarity-dependent threshold voltages. Thermal effects seem to be avoided in the functional process. A good reproducibility, realized by simple evaporations, will make a high packing density possible.

Published in:

Proceedings of the IEEE  (Volume:64 ,  Issue: 3 )