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Micromachining of pulsed laser annealed PECVD SixGe1-x deposited at temperatures ≤ 370°C

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2 Author(s)
Sedky, S. ; Dept. of Phys., The American Univ. in Cairo, Egypt ; Witvrouw, A.

This work studies the possibility to treat plasma enhanced chemical vapor deposited (PECVD) silicon germanium (SixGe1-x) thin films grown at 370°C or lower with a pulsed excimer laser for obtaining good MEMS structural layers. The main advantage of using PECVD is that a high growth rate (∼ 35 nm/min) can be achieved at low temperatures (≤ 370°C). It is demonstrated that optimizing the pulse fluence, number and rate yields high quality films characterized by a low defect density (∼ 102 defect/cm2), large grains (∼ 300 nm), a low mean stress (∼ 40 MPa) and a low stress gradient.

Published in:

Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on

Date of Conference:

30 Jan.-3 Feb. 2005

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