By Topic

High responsivity InP-InGaAs quantum-well infrared photodetectors: characteristics and focal plane array performance

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Cellek, O.O. ; Electr. Eng. Dept., Middle East Tech. Univ., Ankara, Turkey ; Ozer, S. ; Besikci, C.

We report the detailed characteristics of long-wavelength infrared InP-In0.53Ga0.47As quantum-well infrared photodetectors (QWIPs) and 640×512 focal plane array (FPA) grown by molecular beam epitaxy. For reliable assessment of the detector performance, characterization was performed on test detectors of the same size and structure with the FPA pixels. Al0.27Ga0.73As-GaAs QWIPs with similar spectral response (λp=∼7.8 μm) were also fabricated and characterized for comparison. InP-InGaAs QWIPs (20-period) yielded quantum efficiency-gain product as high as 0.46 under -3-V bias with a 77-K peak detectivity above 1×1010 cm·Hz12//W. At 70 K, the detector performance is background limited with f/2 aperture up to ∼ 3-V bias where the peak responsivity (2.9 A/W) is an order of magnitude higher than that of the AlGaAs-GaAs QWIP. The results show that impact ionization in similar InP-InGaAs QWIPs does not start until the average electric-field reaches ∼25 kV/cm, and the detectivity remains high under moderately large bias, which yields high responsivity due to large photoconductive gain. The InP-InGaAs QWIP FPA offers reasonably low noise equivalent temperature difference (NETD) even with very short integration times (τ).70 K NETD values of the FPA with f/1.5 optics are 36 and 64 mK under bias voltages of -0.5 V (τ=11 ms) and -2 V (τ=650 μs), respectively. The results clearly show the potential of InP-InGaAs QWIPs for thermal imaging applications requiring high responsivity and short integration times.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:41 ,  Issue: 7 )