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Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth

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5 Author(s)
Jutzi, M. ; Inst. for Electr. & Opt. Commun. Eng., Univ. of Stuttgart, Germany ; Berroth, M. ; Wohl, G. ; Oehme, M.
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Vertical-incidence Germanium photodiodes grown on thin strain-relaxed buffers on Silicon substrates are reported. For a mesa-type detector with a diameter of 10 μm, a resistance-capacitance-limited 3-dB bandwidth of 25.1 GHz at an incident wavelength of 1552 nm and zero external bias has been measured. At a reverse bias of 2 V, the bandwidth is 38.9 GHz. The detector comprises a 300-nm-thick intrinsic region, and thus, has the potential for easy integration with Si circuitry and exhibits zero bias external quantum efficiencies of 23%, 16%, and 2.8% at 850, 1298, and 1552 nm, respectively.

Published in:

Photonics Technology Letters, IEEE  (Volume:17 ,  Issue: 7 )

Date of Publication:

July 2005

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