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Uncooled performance of 10-Gb/s laser modules with InGaAlAs-InP and InGaAsP-InP MQW electroabsorption Modulators integrated with semiconductor amplifiers

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6 Author(s)
N. C. Frateschi ; Inst. de Fisica "Gleb Wataghin", Univ. Estadual de Campinas, Sao Paulo, Brazil ; J. Zhang ; R. Jambunathan ; W. J. Choi
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Uncooled operation of long-reach high performance C-band 10 Gb/s of optical modulator modules is presented. Modules consisting of a distributed feedback laser and a chip with a monolithically integrated electroabsorption modulator and semiconductor optical amplifier based on multiquantum-well structures of both InGaAsP-InP and InGaAlAs-InP material systems are presented. Dispersion penalty of 1 dB over 94-km transmission, output power above 0 dBm, and low extinction ratio variation are demonstrated over an 80°C temperature range. A simple analysis of the quantum confined Stark effect is employed to explain the temperature-dc bias voltage dependence.

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IEEE Photonics Technology Letters  (Volume:17 ,  Issue: 7 )