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High-power 660-nm GaInP-AlGaInP laser diodes with low vertical beam divergence angles

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5 Author(s)
Ma, Byungjin ; Opt. Semicond. Div., Central R&D Inst., Gyeonggi-Do, South Korea ; Cho, Soohaeng ; Changyoun Lee ; Kim, Youngmin
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We present 660-nm GaInP-AlGaInP ridge multiple-quantum-well laser diodes (LDs) reliably operating at high output power over 200 mW at 70°C not showing unstable higher order lateral modes owing to an adoption of a dry etching method instead of a conventional chemical wet etching for realizing steep ridge sidewalls. Employing an optimized two-step n-cladding layer LDs produced very narrow horizontal and vertical beam divergence angles of 8.6° and 15.3°, respectively. To the best of our knowledge, this vertical beam divergence angle is the lowest value ever reported in high-power 660-nm LDs operating over 200 mW and is expected to play an important role in minimizing the coupling loss between LD and passive optical components in digital versatile disc system.

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Photonics Technology Letters, IEEE  (Volume:17 ,  Issue: 7 )