By Topic

P-channel chip-scale lateral power MOSFET for portable electronics applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Shen, Z.J. ; Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA ; Okada, D. ; Lin, F. ; Cheng, X.
more authors

P-channel power MOSFETs are widely used in portable electronics products as the load switch. We report a new 12 V P-channel chip-scale lateral power MOSFET with ultra-low on-resistance and small package footprint. The product of RDS (ON) and footprint area of the lateral MOSFET is reduced by nearly 50% comparing to the conventional trench MOSFET with the same voltage rating. We have developed an innovative metal interconnect and chip-scale packaging approach to overcome the "scaling issue" which limits the chip size and current rating of traditional lateral power devices. The lateral MOSFET is designed and fabricated based on a standard 0.5 μm CMOS process, and packaged in flip-chip forms using a wafer bumping technology. P-channel Lateral Power MOSFETs provide a good solution for load switching in all sorts of battery-powered portable electronics products.

Published in:

Applied Power Electronics Conference and Exposition, 2005. APEC 2005. Twentieth Annual IEEE  (Volume:1 )

Date of Conference:

6-10 March 2005