Referenced Items are not available for this document.
GaN Schottky diodes offer the same performance benefits as SiC-based devices at a significantly lower cost. A 600 V GaN-based Schottky diode was substituted in a power conversion circuit to reduce its size and complexity. The resulting circuit had a higher efficiency and lower operating temperature than a Si-based configuration
Published in:
Applied Power Electronics Conference and Exposition, 2005. APEC 2005. Twentieth Annual IEEE
(Volume:1
)
Date of Conference: 6-10 March 2005
- Page(s):
- 311 - 314 Vol. 1
- Print ISBN:
- 0-7803-8975-1
- INSPEC Accession Number:
- 8538780
- Conference Location :
- Austin, TX
- Digital Object Identifier :
- 10.1109/APEC.2005.1452943
- Product Type:
- Conference Publications
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