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10-Gb/s high-speed monolithically integrated photoreceiver using InGaAs p-i-n PD and planar doped InAlAs/InGaAs HEMTs

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4 Author(s)
Akahori, Y. ; NTT Opto-Electron. Lab., Kanagawa, Japan ; Akatsu, Y. ; Kohzen, A. ; Yoshida, J.

A long-wavelength monolithically integrated photoreceiver which is capable of operation at a 10-Gb/s NRZ light signal is described. The photoreceiver was fabricated using an Si-planar-doping technique to enhance the uniformity and transconductance of HEMTs and using Be-ion implantation technique. The circuit consists of a p-i-n PD, a transimpedance amplifier, and a buffer stage to provide an output impedance of 50 Omega . The photoreceiver demonstrated a 3-dB down bandwidth of 8 GHz and the responsivity of 158 V/W. The measured input noise current was 20 pA/ square root Hz and the calculated sensitivity at 10-Gb/s NRZ signal was -16.5 dBm. The receiver is the first monolithically integrated p-i-n-HEMT receiver capable of receiving a 10-Gb/s NRZ light signal.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:4 ,  Issue: 7 )