Ingaasp/ingaasp multiple-quantum-well modulator with improved saturation intensity and bandwidth over 20 ghz

A single-mode modulator was realized from an AP-MOCVD grown structure. The multiple-quantum-well electroabsorptive material is made of shallow InGaAsP wells separated by InGaAsP barriers. It exhibits at 1.54 mu m (TE) a 17 dB extinction ratio for a 3 V drive voltage, a 2.7 dB on-state loss and a small-signal bandwidth over 20 GHz with 1-2 mW of coupled optical power.<
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