By Topic

Millimeter-wave IMPATT diodes with improved efficiency by using ion-implanted ohmic contact

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hirachi, Y. ; Fujitsu Laboratories Ltd., Kawasaki, Japan ; Nishi, H. ; Shinoda, M. ; Fukukawa, Y.

The application of arsenic ion-implantation to the reduction of the contact resistance in the n+substrate of millimeter-wave IMPATT diodes is discussed. Single-drift-region-type IMPATT fabricated with these techniques exhibited output powers ∼600 mW at ΔTj = 200°C with 8.7-percent conversion efficiencies over frequency range of 52 to 60 GHz.

Published in:

Proceedings of the IEEE  (Volume:63 ,  Issue: 9 )