Millimeter-wave IMPATT diodes with improved efficiency by using ion-implanted ohmic contact

The application of arsenic ion-implantation to the reduction of the contact resistance in the n
⁺
substrate of millimeter-wave IMPATT diodes is discussed. Single-drift-region-type IMPATT fabricated with these techniques exhibited output powers ∼600 mW at ΔTj = 200°C with 8.7-percent conversion efficiencies over frequency range of 52 to 60 GHz.